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IXTH34N65X2

IXTH34N65X2

IXTH34N65X2

IXYS

MOSFET N-CH 650V 34A TO247

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IXTH34N65X2 Pricing & Ordering

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60 $4.50000 $270
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 105mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3120 pF @ 25 V
FET Feature -
Power Dissipation (Max) 540W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3
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