Welcome to ichome.com!

logo
Home

FDN8601

FDN8601

FDN8601

onsemi

MOSFET N-CH 100V 2.7A SUPERSOT3

compliant

FDN8601 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.38500 -
6,000 $0.36575 -
15,000 $0.35200 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 109mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 210 pF @ 50 V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

DI050N04PT
SI2301CDS-T1-GE3
IXTQ26N50P
IXTQ26N50P
$0 $/piece
STD1NK60-1
STP25N80K5
APT20M18LVRG
SQJA16EP-T1_GE3
STB160N75F3

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.