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IXTH120P065T

IXTH120P065T

IXTH120P065T

IXYS

MOSFET P-CH 65V 120A TO247

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IXTH120P065T Pricing & Ordering

Quantity Unit Price Ext. Price
30 $4.90500 $147.15
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 65 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 185 nC @ 10 V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 13200 pF @ 25 V
FET Feature -
Power Dissipation (Max) 298W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3
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