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TPN3300ANH,LQ

TPN3300ANH,LQ

TPN3300ANH,LQ

MOSFET N-CH 100V 9.4A 8TSON

non-compliant

TPN3300ANH,LQ Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.34075 -
6,000 $0.32900 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 33mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 50 V
FET Feature -
Power Dissipation (Max) 700mW (Ta), 27W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-PowerVDFN
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