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IXTH10P60

IXTH10P60

IXTH10P60

IXYS

MOSFET P-CH 600V 10A TO247

non-compliant

IXTH10P60 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $9.00000 $9
30 $7.38000 $221.4
120 $6.66000 $799.2
510 $5.58000 $2845.8
1,020 $5.04000 -
0 items
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Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4700 pF @ 25 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3
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