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IXTA6N100D2HV

IXTA6N100D2HV

IXTA6N100D2HV

IXYS

MOSFET N-CH 1000V 6A TO263HV

non-compliant

IXTA6N100D2HV Pricing & Ordering

Quantity Unit Price Ext. Price
1 $11.21340 $11.2134
500 $11.101266 $5550.633
1000 $10.989132 $10989.132
1500 $10.876998 $16315.497
2000 $10.764864 $21529.728
2500 $10.65273 $26631.825
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 6A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 0V
Rds On (Max) @ Id, Vgs 2.2Ohm @ 3A, 0V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 10 V
FET Feature Depletion Mode
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263HV
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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