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IXTA6N100D2HV

IXTA6N100D2HV

IXTA6N100D2HV

IXYS

MOSFET N-CH 1000V 6A TO263HV

compliant

IXTA6N100D2HV Pricing & Ordering

Quantity Unit Price Ext. Price
1 $11.21340 $11.2134
500 $11.101266 $5550.633
1000 $10.989132 $10989.132
1500 $10.876998 $16315.497
2000 $10.764864 $21529.728
2500 $10.65273 $26631.825
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 6A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 0V
Rds On (Max) @ Id, Vgs 2.2Ohm @ 3A, 0V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 10 V
FET Feature Depletion Mode
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263HV
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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