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IXTA4N65X2

IXTA4N65X2

IXTA4N65X2

IXYS

MOSFET N-CH 650V 4A TO263

SOT-23

non-compliant

IXTA4N65X2 Pricing & Ordering

Quantity Unit Price Ext. Price
50 $1.65000 $82.5
35 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 455 pF @ 25 V
FET Feature -
Power Dissipation (Max) 80W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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