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SISS80DN-T1-GE3

SISS80DN-T1-GE3

SISS80DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 58.3A/210A PPAK

compliant

SISS80DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.75000 $1.75
500 $1.7325 $866.25
1000 $1.715 $1715
1500 $1.6975 $2546.25
2000 $1.68 $3360
2500 $1.6625 $4156.25
0 items
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Wholesale Prices for Every Order, Big or Small
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 58.3A (Ta), 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 0.92mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V
Vgs (Max) +12V, -8V
Input Capacitance (Ciss) (Max) @ Vds 6450 pF @ 10 V
FET Feature -
Power Dissipation (Max) 5W (Ta), 65W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
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