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IXTA1N120P-TRL

IXTA1N120P-TRL

IXTA1N120P-TRL

IXYS

MOSFET N-CH 1200V 1A TO263

compliant

IXTA1N120P-TRL Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.25229 $3.25229
500 $3.2197671 $1609.88355
1000 $3.1872442 $3187.2442
1500 $3.1547213 $4732.08195
2000 $3.1221984 $6244.3968
2500 $3.0896755 $7724.18875
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 20Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 17.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V
FET Feature -
Power Dissipation (Max) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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