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SIHB24N65EFT1-GE3

SIHB24N65EFT1-GE3

SIHB24N65EFT1-GE3

Vishay Siliconix

N-CHANNEL 650V

compliant

SIHB24N65EFT1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $6.30000 $6.3
500 $6.237 $3118.5
1000 $6.174 $6174
1500 $6.111 $9166.5
2000 $6.048 $12096
2500 $5.985 $14962.5
493 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 156mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2774 pF @ 100 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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