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IXTA180N10T7

IXTA180N10T7

IXTA180N10T7

IXYS

MOSFET N-CH 100V 180A TO263-7

non-compliant

IXTA180N10T7 Pricing & Ordering

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50 $3.30760 $165.38
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 151 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 25 V
FET Feature -
Power Dissipation (Max) 480W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263-7 (IXTA)
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
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