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IPW60R017C7XKSA1

IPW60R017C7XKSA1

IPW60R017C7XKSA1

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IPW60R017C7XKSA1 Pricing & Ordering

Quantity Unit Price Ext. Price
240 $17.59967 $4223.9208
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 109A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 17mOhm @ 58.2A, 10V
Vgs(th) (Max) @ Id 4V @ 2.91mA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9890 pF @ 400 V
FET Feature -
Power Dissipation (Max) 446W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
Package / Case TO-247-3
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