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IXTA12N50P

IXTA12N50P

IXTA12N50P

IXYS

MOSFET N-CH 500V 12A TO263

compliant

IXTA12N50P Pricing & Ordering

Quantity Unit Price Ext. Price
50 $2.45000 $122.5
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1830 pF @ 25 V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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