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NTMS4807NR2G

NTMS4807NR2G

NTMS4807NR2G

onsemi

MOSFET N-CH 30V 9.1A 8SOIC

compliant

NTMS4807NR2G Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.50081 -
5,000 $0.47577 -
12,500 $0.45788 -
2500 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 9.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.1mOhm @ 14.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 24 V
FET Feature -
Power Dissipation (Max) 860mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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