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IXFH80N65X2

IXFH80N65X2

IXFH80N65X2

IXYS

MOSFET N-CH 650V 80A TO247

compliant

IXFH80N65X2 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $11.10000 $11.1
30 $9.10200 $273.06
120 $8.21400 $985.68
510 $6.88200 $3509.82
1,020 $6.21600 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 143 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 8245 pF @ 25 V
FET Feature -
Power Dissipation (Max) 890W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3
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