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NVMSD6N303R2G

NVMSD6N303R2G

NVMSD6N303R2G

onsemi

MOSFET N-CH 30V 6A 8SOIC

non-compliant

NVMSD6N303R2G Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.47000 $0.47
500 $0.4653 $232.65
1000 $0.4606 $460.6
1500 $0.4559 $683.85
2000 $0.4512 $902.4
2500 $0.4465 $1116.25
24568 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 32mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 24 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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