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IXFH60N65X2-4

IXFH60N65X2-4

IXFH60N65X2-4

IXYS

MOSFET N-CH 650V 60A TO247-4L

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IXFH60N65X2-4 Pricing & Ordering

Quantity Unit Price Ext. Price
30 $8.20000 $246
278 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 52mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 108 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 6300 pF @ 25 V
FET Feature -
Power Dissipation (Max) 780W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
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