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NVD4809NT4G

NVD4809NT4G

NVD4809NT4G

onsemi

MOSFET N-CH 30V 9.6A/58A DPAK-3

compliant

NVD4809NT4G Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.26000 $0.26
500 $0.2574 $128.7
1000 $0.2548 $254.8
1500 $0.2522 $378.3
2000 $0.2496 $499.2
2500 $0.247 $617.5
11480 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 9.6A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 11.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1456 pF @ 12 V
FET Feature -
Power Dissipation (Max) 1.4W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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