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IV1Q12160T4

IV1Q12160T4

IV1Q12160T4

Inventchip

SIC MOSFET, 1200V 160MOHM, TO-24

non-compliant

IV1Q12160T4 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $19.64000 $19.64
500 $19.4436 $9721.8
1000 $19.2472 $19247.2
1500 $19.0508 $28576.2
2000 $18.8544 $37708.8
2500 $18.658 $46645
111 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 195mOhm @ 10A, 20V
Vgs(th) (Max) @ Id 2.9V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 20 V
Vgs (Max) +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds 885 pF @ 800 V
FET Feature -
Power Dissipation (Max) 138W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4
Package / Case TO-247-4
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