Welcome to ichome.com!
Name | Value |
---|---|
Product Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 195mOhm @ 10A, 20V |
Vgs(th) (Max) @ Id | 2.9V @ 1.9mA |
Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 20 V |
Vgs (Max) | +20V, -5V |
Input Capacitance (Ciss) (Max) @ Vds | 885 pF @ 800 V |
FET Feature | - |
Power Dissipation (Max) | 138W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-4 |
Package / Case | TO-247-4 |
Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.