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NTMS10P02R2G

NTMS10P02R2G

NTMS10P02R2G

onsemi

MOSFET P-CH 20V 8.8A 8SOIC

non-compliant

NTMS10P02R2G Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.71579 -
5,000 $0.68000 -
12,500 $0.65444 -
0 items
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 14mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 3640 pF @ 16 V
FET Feature -
Power Dissipation (Max) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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