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IRFH5110TRPBF

IRFH5110TRPBF

IRFH5110TRPBF

MOSFET N-CH 100V 11A/63A 8PQFN

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IRFH5110TRPBF Pricing & Ordering

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4,000 $0.63140 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 12.4mOhm @ 37A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3152 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.6W (Ta), 114W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6)
Package / Case 8-PowerVDFN
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