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| Name | Value |
|---|---|
| Product Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 20A, 15V |
| Vgs(th) (Max) @ Id | 5.7V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 15 V |
| Vgs (Max) | +20V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 800 V |
| FET Feature | Current Sensing |
| Power Dissipation (Max) | 228W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-4-1 |
| Package / Case | TO-247-4 |
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