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IPU60R1K4C6BKMA1

IPU60R1K4C6BKMA1

IPU60R1K4C6BKMA1

MOSFET N-CH 600V 3.2A TO251-3

compliant

IPU60R1K4C6BKMA1 Pricing & Ordering

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Name Value
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 100 V
FET Feature Super Junction
Power Dissipation (Max) 28.4W (Tc)
Operating Temperature -55°C ~ 155°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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