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SI2315BDS-T1-E3

SI2315BDS-T1-E3

SI2315BDS-T1-E3

Vishay Siliconix

MOSFET P-CH 12V 3A SOT23-3

non-compliant

SI2315BDS-T1-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.16642 -
6,000 $0.15628 -
15,000 $0.14614 -
30,000 $0.13904 -
75,000 $0.13830 -
0 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 50mOhm @ 3.85A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 715 pF @ 6 V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
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