Welcome to ichome.com!

logo
Home

IPS65R1K4C6AKMA1

IPS65R1K4C6AKMA1

IPS65R1K4C6AKMA1

MOSFET N-CH 650V 3.2A TO251-3

non-compliant

IPS65R1K4C6AKMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.06000 $1.06
10 $0.93600 $9.36
100 $0.73950 $73.95
500 $0.57350 $286.75
1,000 $0.45276 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 100 V
FET Feature -
Power Dissipation (Max) 28W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3-11
Package / Case TO-251-3 Stub Leads, IPak
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.