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IPN70R600P7SATMA1

IPN70R600P7SATMA1

IPN70R600P7SATMA1

MOSFET N-CH 700V 8.5A SOT223

non-compliant

IPN70R600P7SATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.31709 -
6,000 $0.29522 -
15,000 $0.28428 -
30,000 $0.27832 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 364 pF @ 400 V
FET Feature -
Power Dissipation (Max) 6.9W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223
Package / Case TO-261-4, TO-261AA
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