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TP2520N8-G

TP2520N8-G

TP2520N8-G

MOSFET P-CH 200V 260MA TO243AA

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TP2520N8-G Pricing & Ordering

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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 260mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 125 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-243AA (SOT-89)
Package / Case TO-243AA
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