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IPN60R360PFD7SATMA1

IPN60R360PFD7SATMA1

IPN60R360PFD7SATMA1

MOSFET N-CH 650V 10A SOT223

compliant

IPN60R360PFD7SATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.49000 $1.49
500 $1.4751 $737.55
1000 $1.4602 $1460.2
1500 $1.4453 $2167.95
2000 $1.4304 $2860.8
2500 $1.4155 $3538.75
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs 12.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 534 pF @ 400 V
FET Feature -
Power Dissipation (Max) 7W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-3-1
Package / Case TO-261-3
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