Welcome to ichome.com!

logo
Home

SIHG21N65EF-GE3

SIHG21N65EF-GE3

SIHG21N65EF-GE3

Vishay Siliconix

MOSFET N-CH 650V 21A TO247AC

non-compliant

SIHG21N65EF-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $6.13000 $6.13
10 $5.50100 $55.01
100 $4.54520 $454.52
500 $3.71718 $1858.59
1,000 $3.16520 -
2,500 $3.01659 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2322 pF @ 100 V
FET Feature -
Power Dissipation (Max) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

BUK9Y14-40B,115
SCT3060ALGC11
NTMFS4708NT3G
NTMFS4708NT3G
$0 $/piece
PMH950UPEH
PMH950UPEH
$0 $/piece
PMZ950UPELYL
DMN4030LK3Q-13
MCH3478-TL-H
MCH3478-TL-H
$0 $/piece
IXTA20N65X
IXTA20N65X
$0 $/piece

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.