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IPL65R190E6AUMA1

IPL65R190E6AUMA1

IPL65R190E6AUMA1

MOSFET N-CH 650V 20.2A 4VSON

non-compliant

IPL65R190E6AUMA1 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1620 pF @ 100 V
FET Feature -
Power Dissipation (Max) 151W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-VSON-4
Package / Case 4-PowerTSFN
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