Welcome to ichome.com!

logo
Home

IPD80R1K4CEBTMA1

IPD80R1K4CEBTMA1

IPD80R1K4CEBTMA1

MOSFET N-CH 800V 3.9A TO252-3

compliant

IPD80R1K4CEBTMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.52788 -
5,000 $0.50464 -
12,500 $0.48804 -
25,000 $0.47476 -
62,500 $0.46148 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id 3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 100 V
FET Feature -
Power Dissipation (Max) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

PMR280UN,115
PMR280UN,115
$0 $/piece
FDPF79N15
FDPF79N15
$0 $/piece
RFP14N05
RFP14N05
$0 $/piece
BUK9832-55A,115
BUK9832-55A,115
$0 $/piece
IPP050N06N G
AUIRLR2703
RSS080N05FU6TB

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.