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IPI037N06L3GHKSA1

IPI037N06L3GHKSA1

IPI037N06L3GHKSA1

MOSFET N-CH 60V 90A TO262-3

non-compliant

IPI037N06L3GHKSA1 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 2.2V @ 93µA
Gate Charge (Qg) (Max) @ Vgs 79 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13000 pF @ 30 V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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