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SI1417EDH-T1-GE3

SI1417EDH-T1-GE3

SI1417EDH-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 2.7A SC70-6

non-compliant

SI1417EDH-T1-GE3 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 85mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-70-6
Package / Case 6-TSSOP, SC-88, SOT-363
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