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IPD90N10S4L06ATMA1

IPD90N10S4L06ATMA1

IPD90N10S4L06ATMA1

MOSFET N-CH 100V 90A TO252-3

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IPD90N10S4L06ATMA1 Pricing & Ordering

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2,500 $1.01990 -
5,000 $0.98212 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.6mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 2.1V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 6250 pF @ 25 V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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