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FQD8P10TM

FQD8P10TM

FQD8P10TM

onsemi

MOSFET P-CH 100V 6.6A DPAK

compliant

FQD8P10TM Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.28662 -
5,000 $0.26791 -
12,500 $0.25855 -
25,000 $0.25345 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 530mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 44W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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