Welcome to ichome.com!

logo
Home

IPD80R2K0P7ATMA1

IPD80R2K0P7ATMA1

IPD80R2K0P7ATMA1

MOSFET N-CH 800V 3A TO252-3

compliant

IPD80R2K0P7ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.38793 -
5,000 $0.36853 -
12,500 $0.35468 -
25,000 $0.35266 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 940mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 175 pF @ 500 V
FET Feature -
Power Dissipation (Max) 24W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

SI7116DN-T1-GE3
G3R75MT12D
FDMS86581
FDMS86581
$0 $/piece
NTE4153NT1G
NTE4153NT1G
$0 $/piece
SI7113DN-T1-GE3
SCH1436-TL-W
SCH1436-TL-W
$0 $/piece

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.