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NTE4153NT1G

NTE4153NT1G

NTE4153NT1G

onsemi

MOSFET N-CH 20V 915MA SC89-3

compliant

NTE4153NT1G Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.09641 -
6,000 $0.08715 -
15,000 $0.07789 -
30,000 $0.07325 -
75,000 $0.06538 -
150,000 $0.06307 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 915mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 230mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.82 nC @ 4.5 V
Vgs (Max) ±6V
Input Capacitance (Ciss) (Max) @ Vds 110 pF @ 16 V
FET Feature -
Power Dissipation (Max) 300mW (Tj)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-89-3
Package / Case SC-89, SOT-490
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