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IPD65R190C7ATMA1

IPD65R190C7ATMA1

IPD65R190C7ATMA1

MOSFET N-CH 650V 13A TO252-3

compliant

IPD65R190C7ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $1.38862 -
5,000 $1.33719 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 4V @ 290µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 400 V
FET Feature -
Power Dissipation (Max) 72W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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