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IXTA60N10T

IXTA60N10T

IXTA60N10T

IXYS

MOSFET N-CH 100V 60A TO263

non-compliant

IXTA60N10T Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.92000 $1.92
50 $1.55000 $77.5
100 $1.39500 $139.5
500 $1.08500 $542.5
1,000 $0.89900 -
2,500 $0.86800 -
0 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 25 V
FET Feature -
Power Dissipation (Max) 176W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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