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IXTA60N10T

IXTA60N10T

IXTA60N10T

IXYS

MOSFET N-CH 100V 60A TO263

compliant

IXTA60N10T Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.92000 $1.92
50 $1.55000 $77.5
100 $1.39500 $139.5
500 $1.08500 $542.5
1,000 $0.89900 -
2,500 $0.86800 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 25 V
FET Feature -
Power Dissipation (Max) 176W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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