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IPD60R2K0PFD7SAUMA1

IPD60R2K0PFD7SAUMA1

IPD60R2K0PFD7SAUMA1

MOSFET N-CH 650V 3A TO252-3

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IPD60R2K0PFD7SAUMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.95000 $0.95
500 $0.9405 $470.25
1000 $0.931 $931
1500 $0.9215 $1382.25
2000 $0.912 $1824
2500 $0.9025 $2256.25
130 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 3.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 134 pF @ 400 V
FET Feature -
Power Dissipation (Max) 20W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-344
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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