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RM6N100S4

RM6N100S4

RM6N100S4

Rectron USA

MOSFET N-CH 100V 6A SOT223-3

non-compliant

RM6N100S4 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.14000 $0.14
500 $0.1386 $69.3
1000 $0.1372 $137.2
1500 $0.1358 $203.7
2000 $0.1344 $268.8
2500 $0.133 $332.5
0 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 140mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 690 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223-3
Package / Case TO-261-4, TO-261AA
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