Welcome to ichome.com!

logo
Home

IPD60R1K4C6ATMA1

IPD60R1K4C6ATMA1

IPD60R1K4C6ATMA1

MOSFET N-CH 600V 3.2A TO252-3

non-compliant

IPD60R1K4C6ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.41822 -
5,000 $0.39245 -
12,500 $0.37957 -
25,000 $0.37254 -
7500 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 100 V
FET Feature -
Power Dissipation (Max) 28.4W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

IXFH16N120P
IXFH16N120P
$0 $/piece
SIR450DP-T1-RE3
NVD3055-094T4G-VF01
NVD3055-094T4G-VF01
$0 $/piece
SIR470DP-T1-GE3
SIS429DNT-T1-GE3
SI4431BDY-T1-E3
CSD17576Q5B
NDS9430
CSD19534Q5A

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.