Welcome to ichome.com!

logo
Home

SIR470DP-T1-GE3

SIR470DP-T1-GE3

SIR470DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 40V 60A PPAK SO-8

non-compliant

SIR470DP-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $1.35135 -
6,000 $1.30130 -
4275 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5660 pF @ 20 V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

SIS429DNT-T1-GE3
SI4431BDY-T1-E3
CSD17576Q5B
NDS9430
CSD19534Q5A
NVMFS6H801NLWFT1G
NVMFS6H801NLWFT1G
$0 $/piece
STB47N50DM6AG
STW48N60M6
IXTH6N50D2
IXTH6N50D2
$0 $/piece

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.