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IPD60R180P7SAUMA1

IPD60R180P7SAUMA1

IPD60R180P7SAUMA1

MOSFET N-CH 600V 18A TO252-3

non-compliant

IPD60R180P7SAUMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.85291 -
5,000 $0.82490 -
12,500 $0.80963 -
7323 items
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Bom Cost Down
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1081 pF @ 400 V
FET Feature -
Power Dissipation (Max) 72W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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