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IPD530N15N3GATMA1

IPD530N15N3GATMA1

IPD530N15N3GATMA1

MOSFET N-CH 150V 21A TO252-3

compliant

IPD530N15N3GATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.66913 -
5,000 $0.63567 -
12,500 $0.61178 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 53mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 887 pF @ 75 V
FET Feature -
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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