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IAUS300N08S5N012ATMA1

IAUS300N08S5N012ATMA1

IAUS300N08S5N012ATMA1

MOSFET N-CH 80V 300A HSOG-8

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IAUS300N08S5N012ATMA1 Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs 231 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 16250 pF @ 40 V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOG-8-1
Package / Case 8-PowerSMD, Gull Wing
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