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IPD50R380CEAUMA1

IPD50R380CEAUMA1

IPD50R380CEAUMA1

MOSFET N-CH 500V 14.1A TO252-3

compliant

IPD50R380CEAUMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.49046 -
5,000 $0.46863 -
12,500 $0.45303 -
25,000 $0.45077 -
19785 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 14.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V
Rds On (Max) @ Id, Vgs 380mOhm @ 3.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 260µA
Gate Charge (Qg) (Max) @ Vgs 24.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 584 pF @ 100 V
FET Feature Super Junction
Power Dissipation (Max) 98W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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