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NVMS5P02R2G

NVMS5P02R2G

NVMS5P02R2G

onsemi

MOSFET P-CH 20V 3.95A 8SOIC

compliant

NVMS5P02R2G Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.42858 -
5,000 $0.40715 -
12,500 $0.39185 -
25,000 $0.38962 -
1415 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.95A (Ta)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 33mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 4.5 V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 16 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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