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IPD30N03S4L14ATMA1

IPD30N03S4L14ATMA1

IPD30N03S4L14ATMA1

MOSFET N-CH 30V 30A TO252-3

non-compliant

IPD30N03S4L14ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.31836 -
5,000 $0.29641 -
12,500 $0.28543 -
25,000 $0.27944 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 980 pF @ 25 V
FET Feature -
Power Dissipation (Max) 31W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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