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ZXMN10B08E6TA

ZXMN10B08E6TA

ZXMN10B08E6TA

Diodes Incorporated

MOSFET N-CH 100V 1.6A SOT26

non-compliant

ZXMN10B08E6TA Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.34285 -
6,000 $0.32184 -
15,000 $0.31133 -
30,000 $0.30560 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.3V, 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 497 pF @ 50 V
FET Feature -
Power Dissipation (Max) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-26
Package / Case SOT-23-6
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